(Hong Kong)
Product Summary
The BTS5240G is an N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Extern adjustable current limitation. The applications of the BTS5240G include All types of resistive, inductive and capacitive loads, μC compatible high-side power switch with diagnostic feedback for 12 V grounded loads, Due to the adjustable current limitation best suitable for loads with high inrush currents, so as lamps and Replaces electromechanical relays, fuses and discrete circuits.
Parametrics
BTS5240G absolute maximum ratings: (1)Supply voltage, Vbb: 28 V; (2)Supply voltage for full short circuit protection; Tj = -40 to 150℃, Vbb(SC): 28 V; (3)Maximum voltage across DMOS, VON: 52V; (4)Load dump protection, VLoadDump: 40 V; (5)Load current, IL: IL(lim); (6)Operating temperature range, Tj: -40 to +150℃; (7)Storage temperature range, Tstg: -55 to +150℃; (8)Dynamical temperature rise at switching, dT: 60 K; (9)Power dissipation (DC), one channel active, Ptot: 1,4 W; (10)Maximal switchable inductance, single pulse, ZL(s): 9.8mH; (11)Electrostatic discharge voltage, VESD: 1.0kV; (12)Continuous input voltage, VIN: -10 to 16 V; (13)Voltage at current limit adjustment pin, VCLA: -10 to 16V; (14)Current limit adjustment current, ICLA: ±5.0 mA; (15)Current through input pin (DC), IIN: ±5.0 mA; (16)Current through sense (DC), IIS: -5 to 10 mA.
Features
BTS5240G features: (1)Very low standby current; (2)CMOS compatible input; (3)Improved electromagnetic compatibility (EMC); (4)Stable behaviour at low battery voltage.
Diagrams
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 BTS5240G |
Infineon Technologies |
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Data Sheet |
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